2 practice sets · Page 1 of 1
IGBT is made of ______________ layers of semiconductor to form a PNPN structure.
Three
Two
Four
One
Correct Answer: C — Four
Explanation:
An IGBT is constructed from four semiconductor layers — P+, N−, P, and N+ — forming a PNPN structure. These layers enable high voltage blocking in the N− drift region and efficient current conduction between collector and emitter when the gate is triggered.
Which of the given statement is false regarding the IGBT?
It is a unipolar switch.
Drain, source and gate are the three terminals of the IGBT
It is a uni-directional switch.
It is a fully controlled switch.
Correct Answer: B — Drain, source and gate are the three terminals of the IGBT
Explanation:
The three terminals of an IGBT are gate, collector, and emitter — not drain, source, and gate. Drain and source are MOSFET terminals. The IGBT is a bipolar device (not unipolar), is unidirectional, and is fully controlled via its gate voltage.
