Power Semiconductor Diodes And Transistors in Power Electronics And Drives : Practice MCQ Questions & Answers with Explanations

An IGBT is constructed from four semiconductor layers — P+, N−, P, and N+ — forming a PNPN structure. These layers enable high voltage blocking in the N− drift region and efficient current conduction between collector and emitter when the gate is triggered.

The three terminals of an IGBT are gate, collector, and emitter — not drain, source, and gate. Drain and source are MOSFET terminals. The IGBT is a bipolar device (not unipolar), is unidirectional, and is fully controlled via its gate voltage.